Báo điện tử IEEE

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nhờ bạn lấy giúp bài:

- A study of deep-submicron MOSFET scaling based on experiment and simulation
http://dx.doi.org/10.1109/16.372070

- An accurate gate length extraction method for sub-quarter micron MOSFET's
http://dx.doi.org/10.1109/16.502130

- Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects
http://dx.doi.org/10.1109/IEDM.1994.383335

- Accurate Back-of-the-Envelope Transistor Model for Deep Sub-micron MOS
http://dx.doi.org/10.1109/MSE.2007.17

- Nano-scale MOSFET: Comments on different ballistic models and device simulation
http://dx.doi.org/10.1109/CCCA.2011.6031438

- Inverse modeling of MOSFETs using I-V characteristics in the subthreshold region
http://dx.doi.org/10.1109/IEDM.1997.650475