Nhờ bạn lấy hộ những bài này:
A physically based mobility model for MOSFET numerical simulation
http://dx.doi.org/10.1109/T-ED.1987.22924
A physically based mobility model for numerical simulation of nonplanar devices
http://dx.doi.org/10.1109/43.9186
Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects
http://dx.doi.org/10.1109/43.918208
Theory of the Monte Carlo method for semiconductor device simulation
http://dx.doi.org/10.1109/16.870569
Cảm ơn bạn.