Nhờ bạn tìm hộ bài này:
1- A new and improved physics-based model for MOS transistors
http://dx.doi.org/10.1109/TED.2005.859623
2- Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
http://dx.doi.org/10.1109/TED.2005.859593
3- Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS
http://dx.doi.org/10.1109/TED.2005.859566
4-A mobility model for carriers in the MOS inversion layer
http://dx.doi.org/10.1109/T-ED.1983.21185
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