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Nhờ bạn lấy hộ 2 bài báo

http://dx.doi.org/10.1109/16.622611
"An improved electron and hole mobility model for general purpose device simulation "

http://dx.doi.org/10.1109/55.506358
"DIBL considerations of extended drain structure for 0.1 /spl mu/m MOSFET's"